سمینار هفتگی هیبرید
اثرات غیرموضعی بر انتقال حرارت در نانوساختارهای نیمه‌رسانا
سخنران: زهرا شمالی
13 شهریور 1404
14:00 تا 15:00
چکیده:
Investigation of heat transport in micro/nanoscale semiconductor structures owing to their application especially in transistor technology, is a matter of interest. There exist atomistic and phenomenological macroscopic methods for heat transport study in semiconductor nanodevices. The atomistic models are more complicated, computationally expensive and simultaneously very accurate. Meanwhile, the macroscopic heat transfer models in support of less computational cost and acceptable but not very precise results, are introduced. The Dual Phase Lag (DPL) model presenting two phase lags, is one of the popular macroscopic schemes. It is obtained that using the DPL model for studying the temperature and heat flux behavior through the nanostructures, results in data which are almost near to that of the atomistic phonon Boltzmann equation (PBE). The present study tries to justify why DPL results are not very accurate and introduces the non-locality as a solution. The studied case is a silicon MOSFET. It is obtained that implementing the non-locality in heat flux is “the missing piece of the puzzle”. While the conventional DPL presents not perfect but almost good results for high Knudsen number systems, including the non-locality makes the results, also for High Kn numbers, very close to that of the PBE data. The newly non-dimensional parameter γ, presenting the strength of the nonlocality, is utilized through the nonlocal DPL modeling. The factor γ is found to have a linear relationship with Knudsen (Kn) number, being 3.5 and 1.5 for Kn=10 and also 0.035 and 0.015 for Kn=0.1, respectively, in one/two dimension. Hence, it is obtained that intruding γ is critical for obtaining accurate temperature and heat flux distributions that are very close to the practical results of the Phonon Boltzmann equation.
لینک حضور آنلاین در سمینار
https://vmeeting2.ipm.ir/b/nan-gkn-wmh-exh
Link: http://qpm.ipm.ac.ir/
اثرات غیرموضعی بر انتقال حرارت در نانوساختارهای نیمه‌رسانا
سخنران: زهرا شمالی
13 شهریور 1404
14:00 تا 15:00
چکیده:
Investigation of heat transport in micro/nanoscale semiconductor structures owing to their application especially in transistor technology, is a matter of interest. There exist atomistic and phenomenological macroscopic methods for heat transport study in semiconductor nanodevices. The atomistic models are more complicated, computationally expensive and simultaneously very accurate. Meanwhile, the macroscopic heat transfer models in support of less computational cost and acceptable but not very precise results, are introduced. The Dual Phase Lag (DPL) model presenting two phase lags, is one of the popular macroscopic schemes. It is obtained that using the DPL model for studying the temperature and heat flux behavior through the nanostructures, results in data which are almost near to that of the atomistic phonon Boltzmann equation (PBE). The present study tries to justify why DPL results are not very accurate and introduces the non-locality as a solution. The studied case is a silicon MOSFET. It is obtained that implementing the non-locality in heat flux is “the missing piece of the puzzle”. While the conventional DPL presents not perfect but almost good results for high Knudsen number systems, including the non-locality makes the results, also for High Kn numbers, very close to that of the PBE data. The newly non-dimensional parameter γ, presenting the strength of the nonlocality, is utilized through the nonlocal DPL modeling. The factor γ is found to have a linear relationship with Knudsen (Kn) number, being 3.5 and 1.5 for Kn=10 and also 0.035 and 0.015 for Kn=0.1, respectively, in one/two dimension. Hence, it is obtained that intruding γ is critical for obtaining accurate temperature and heat flux distributions that are very close to the practical results of the Phonon Boltzmann equation.
لینک حضور آنلاین در سمینار
https://vmeeting2.ipm.ir/b/nan-gkn-wmh-exh
Link: http://qpm.ipm.ac.ir/
