Journal Club: Experiment & Phenomenology – meeting
Investigating the nature of Metal Ions Drift in Memristive Devices by implantation of radioactive isotope.
Investigating the nature of Metal Ions Drift in Memristive Devices by implantation of radioactive isotope.
Dr. Adeleh Mokhles Gerami - IPM
30 JAN 2023
11:00 - 12:00
Abstract:
The discovery of the unique resistance switching mechanism in memristive devices is attracting efforts to replace current transistors in dynamic random access memories (DRAM) and is introducing a novel architecture for in-memory computing devices that provides optimal functionality for neural network computation. Briefly speaking, these developments are of particular importance and are leading to a revolution in the future of electronic devices. It is expected that memristive devices can be used to construct long-term memories, but faster than current DRAM. Although memristive devices can be a very efficient choice in the development of high-speed and low-cost computer technologies, such devices are not commercially exploited mainly because of the construction issues. Among these technical issues, the lack of a reliable model to explain the physics of the switching mechanism is the main problem, this resistance switching mechanism is mainly based on the drift of metal ion atoms into the active insulator layer ( ionic channel) as a function of the applied voltage. In this talk, I will present a novel and unique method for discovering the nature of the ionic channel in the memristor. This method is based on the implantation of a radioactive probe into the memristive devices.
Based on
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Meeting Place
https://meet.google.com/fnv-dfkk-ghb
Link: https://meet.google.com/fnv-dfkk-ghb