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| Paper IPM / P / 17965 |
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| Abstract: | |||||
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We investigate transport properties through the nano-ribbons of thin topological insulators irradiated
by circularly polarized light in a high-frequency regime. It is demonstrated that pseudo-spin polarized
edge modes appearing in the bulk band gap are responsible for the current flowing through this nano-
junction whose localization on the top and bottom edges depend strongly on the polarization of light.
Based on these edge modes, one can design a light-induced switch with a desirable on/off ratio of the
current whose off-state is engineered by dividing the scattering region into two parts. Each part is
irradiated by the light with opposite polarization in respect to the other one. This off-state arises from
the quantum blocking of transition between two edge modes with opposite pseudo-spin polarization
induced by irradiation. The local current on each bond shows how the current passes through the
edges and jumps to the opposite edge. Furthermore, some other nano-junctions are proposed as a
light-induced switch which are designed based on the gap opening induced by the perpendicular
magnetization or structural inversion asymmetry.
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