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Paper   IPM / P / 17656
School of Physics
  Title:   Two-Dimensional Artificial Ge Superlattice Confining in Electronic Kagome Lattice Potential Valleys
1.  Q. Tian
2.  S. Izadi Vishkayi
3.  M. Bagheri Tagani
4.  L. Zhang
5.  Y. Tian
6.  L.J. Yin
7.  L. Zhang
8.  Zh. Qin
  Status:   Published
  Journal: Nano Let.
  No.:  21
  Vol.:  23
  Year:  2023
  Pages:   9851â??9857
  Supported by:  IPM
Constructing two-dimensional (2D) artificial superlattices based on single-atom and few-atom nanoclusters is of great interest for exploring exotic physics. Here we report the realization of two types of artificial germanium (Ge) superlattice self-confined by a $\sqrt{37}\times\sqrt{3} R25.3^{\circ}$ superstructure of bismuth (Bi) induced electronic kagome lattice potential valleys. Scanning tunneling microscopy measurements demonstrate that Ge atoms prefer to be confined in the center of the Bi electronic kagome lattice, forming a single-atom superlattice at 120 K. In contrast, room temperature grown Ge atoms and clusters are confined in the sharing triangle corner and the center, respectively, of the kagome lattice potential valleys, forming an artificial honeycomb superlattice. First-principle calculations and Mulliken population analysis corroborate that our reported atomically thin Bi superstructure on Au(111) has a kagome surface potential valley with the center of the inner Bi hexagon and the space between the outer Bi hexagons being energetically favorable for trapping Ge atoms.

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