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| Paper IPM / P / 17126 |
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The broad tunability of the proximity exchange effect between transition-metal dichalcogenides (TMDCs) and chromium iodide (CrI 3) heterostructures offers intriguing possibilities for the use of TMDCs in two-dimensional magnetoelectrics. In this work, the influence of the twist angle and the gate electric field on the electric and thermal transport in a TMDC/CrI 3 junction is investigated using the Dirac-Bogoliubov-de Gennes equation. We show that significant amounts can be controlled by spin-splitting of band structures due to spin-orbit interaction, and that the exchange-splitting of bands arises from the proximity effect. The property of the Andreev reflection (AR) process is highly dependent on the spin valley polarized states due to spin-orbit coupling. Remarkably, perfect spin valley polarized AR is possible over a wide bias range by using a gate voltage to tune the local Fermi energy and varying the type of charge.
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