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|Paper IPM / Nano-Sciences / 15611||
On the basis of density functional calculations and using Baders atom in molecule theory, this article presents quantitative microscopic analyses on the bonding properties of amorphous silicon (a-Si) which could reflect in the observable mechanical and electronic behaviors of this material. In addition, the occurrence and strength of quantum confinement of charge carriers in a composition of silicon crystal nano slabs (SiNSs) embedded in hydrogenated a-Si (a-Si:H) semiconductor are studied. It is shown that the strongest confinement effect happens for Si slabs limited in  direction. The band gap tunability with the width of SiNSs is exhibited and a scaling law is investigated for the size dependent behavior of energy states. It is demonstrated and argued why in these systems the confinement of holes is stronger than electron confinement. The computational methodology used to passivate a-Si defects by hydrogen is also detailed.
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