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Paper   IPM / Nano-Sciences / 13700
School of Nano Science
  Title:   Spin dependent transport in diluted magnetic semiconductor/ superconductor tunnel junctions
1.  Ali Asghar Shokri
2.  S. Negarestani
  Status:   Published
  Journal: PHYSICA C
  Vol.:  507
  Year:  2014
  Pages:   75-80
  Publisher(s):   Elsevier B.V.
  Supported by:  IPM
A modification of Blonder–Tinkham–Klapwijk (BTK) model is proposed to describe transport properties of diluted magnetic semiconductor (DMS)/superconductor(SC)/DMS double tunneling junctions. Coherent spin-polarized transport is studied by taking into account the Andreev reflection on spatial variation of SC barrier parameters in the heterostructure. It is shown that the conductance spectrum exhibits an oscillatory behavior with quasi-particle energy, and the oscillation amplitude is reduced with increasing temperature. We also examine the dependence of tunneling magnetoresistance (TMR) on the barrier strength (j) and spin polarization (P) of two DMS layers. Our results show that TMR decreases with increasing temperature and barrier strength, which may be useful in designing the nano spin-valve devices based on DMS and SC materials.

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