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Paper   IPM / Nano-Sciences / 13641
School of Nano Science
  Title:   The Chemistry of Imperfections in N-Graphene
1.  Dmitry Usachov
2.  Alexander Fedorov
3.  Oleg Vilkov
4.  Boris Senkovskiy
5.  Vera Adamchuk
6.  Lada Yashina
7.  Andrey Volykhov
8.  Mani Farjam
9.  Nikolay Verbitskiy
10.  Alexander Gruneis
11.  Clemens Laubschat
12.  Denis Vyalikh
  Status:   Published
  Journal: Nano Let.
  No.:  9
  Vol.:  14
  Year:  2014
  Pages:   4982-4988
  Publisher(s):   American Chemical Society
  Supported by:  IPM
Many propositions have been already put forth for the practical use of N-graphene in various devices, such as batteries, sensors, ultracapacitors, and next generation electronics. However, the chemistry of nitrogen imperfections in this material still remains an enigma. Here we demonstrate a method to handle N-impurities in graphene, which allows efficient conversion of pyridinic N to graphitic N and therefore precise tuning of the charge carrier concentration. By applying photoemission spectroscopy and density functional calculations, we show that the electron doping effect of graphitic N is strongly suppressed by pyridinic N. As the latter is converted into the graphitic configuration, the efficiency of doping rises up to half of electron charge per N atom.

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