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| Paper IPM / P / 13231 |
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| Abstract: | |||||
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Magnetoresistance and Hall coefficient of a graphene layer are investigated in the presence of a tilted magnetic field. We assume the graphene layer is assembled by either another graphene layer or a two-dimensional electron gas (2DEG) and interlayer electron-electron interaction is modeled within Random Phase Approximation. Our calculated magnetoresistances show different interlayer screening effect between decoupled graphene-graphene and graphene-2DEG systems. We also analyze the dependence of the dielectric material as well as the distance between layers on magnetoresistances. The angle dependence of the Hall coefficient is studied and we show that a quite large Hall resistivity occurs in the graphene layer for small values of tilting angle.
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