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| Paper IPM / P / 12158 |
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| Abstract: | |||||||||
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We calculate the tunneling density-of-states (DOS) of a disorder-free two-dimensional interacting
electron system with a massless-Dirac band Hamiltonian. The DOS exhibits two main features: i)
linear growth at large energies with a slope that is suppressed by quasiparticle velocity enhancement,
and ii) a rich structure of plasmaron peaks which appear at negative bias voltages in an n-doped
sample and at positive bias voltages in a p-doped sample. We predict that the DOS at the Dirac
point is non-zero even in the absence of disorder because of electron-electron interactions, and that
it is then accurately proportional to the Fermi energy. The nite background DOS observed at the
Dirac point of graphene sheets and topological insulator surfaces can therefore be an interaction
eff ect rather than a disorder eff ect.
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