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Paper   IPM / P / 12158
School of Physics
  Title:   The Tunneling Density- of -States of Interacting Massless Dirac Fermions
  Author(s): 
1.  A. Principi
2.  M. Polini
3.  R. Asgari
4.  A.H. MacDonald
  Status:   Published
  Journal: Solid State Commun.
  Vol.:  152
  Year:  2012
  Pages:   1456-1459
  Supported by:  IPM
  Abstract:
We calculate the tunneling density-of-states (DOS) of a disorder-free two-dimensional interacting electron system with a massless-Dirac band Hamiltonian. The DOS exhibits two main features: i) linear growth at large energies with a slope that is suppressed by quasiparticle velocity enhancement, and ii) a rich structure of plasmaron peaks which appear at negative bias voltages in an n-doped sample and at positive bias voltages in a p-doped sample. We predict that the DOS at the Dirac point is non-zero even in the absence of disorder because of electron-electron interactions, and that it is then accurately proportional to the Fermi energy. The nite background DOS observed at the Dirac point of graphene sheets and topological insulator surfaces can therefore be an interaction eff ect rather than a disorder eff ect.

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