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| Paper IPM / P / 12117 |
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| Abstract: | |||||||||
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Employing the kernel polynomial method (KPM), we study the electronic properties of the
graphene bilayers with Bernal stacking in the presence of diagonal disorder, within the
tight-binding approximation and nearest neighbor interactions. The KPM method enables us to
calculate local density of states (LDOS) without the need to exactly diagonalize the
Hamiltonian. We use the geometrical averaging of the LDOS at different lattice sites as a
criterion to distinguish the localized states from extended ones. We find that this model
undergoes an Anderson metal?insulator transition at a critical value of disorder strength.
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