“School of Nano-Sciences”
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| Paper IPM / Nano-Sciences / 8705 |
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We present both numerical and analytical studies of graphene roughness with a crystal structure including 500�?500 atoms. The roughness can effectively result in a random gauge field and has important consequences for its electronic structure. Our results show that its height fluctuations in small scales have a scaling behavior with a temperature dependent roughness exponent in the interval of 0.6<�?<0.7. The correlation function of height fluctuations depends on temperature with a characteristic length scale of �??90 �? (at room temperature). We show that the correlation function of the induced gauge field has a short-range nature with a correlation length of about �??2�??3 �?. We also treat the problem analytically by using the Martin-Siggia-Rose method. The renormalization group flows did not yield any delocalized-localized transition arising from the graphene roughness. Our results are in good agreement with recent experimental observations.
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