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| Paper IPM / Physic / 16259 |
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This work describes an analysis of titanium dioxide (TiO2) thin films prepared on silicon substrates by direct current (DC) planar magnetron sputtering system in O2/Ar atmosphere in correlation with threeâdimensional (3D) surface characterization using atomic force microscopy (AFM). The samples were grown at temperatures 200, 300, and 400°C on silicon substrate using the same deposition time (30âmin) and were distributed into four groups: Group I (asâdeposited samples), Group II (samples annealed at 200°C), Group III (samples annealed at 300°C), and Group IV (samples annealed at 400°C). AFM images with a size of 0.95âμmâÃâ0.95âμm were recorded with a scanning resolution of 256âÃâ256 pixels. Stereometric analysis was carried out on the basis of AFM data, and the surface topography was described according to ISO 25178â2:2012 and American Society of Mechanical Engineers (ASME) B46.1â2009 standards. The maximum and minimum root mean square roughnesses were observed in surfaces of Group II (Sq = 7.96â±â0.1 nm) and Group IV (Sq = 3.87â±â0.1 nm), respectively.
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