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| Paper IPM / Physic / 14326 |
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We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO3/SrTiO3 following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to be dominant.
We explain the anisotropic characteristic of the dielectric function, which is a consequence of elliptical bands close to Fermi surface.
The screening effect, which weakens the long-range Coulomb interaction of the electron-impurity is considered within the random phase approximation. Working at carrier densities high enough to neglect the spin-orbit induced splitting of the bands, we find that the mobility varies
inversely with the cubic power of the carrier density (n2D−3)in good agreement with the experimental
results. We also investigate the role of variable dielectric
constant of SrTiO3 , the multiband nature of the system and interband interactions in
exploring this result.
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