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| Paper IPM / P / 9533 |
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| Abstract: | |||||
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We study the effects of in-plane magnetic field on
the ground state properties of both gapless and gapped graphene sheets
within Random Phase Approximation. The critical magnetic field which fully spin polarized system increases by decreasing the carrier density at zero gap indicating that no spontaneous magnetic phase transition occurs whereas it decreases by decreasing density at large energy gap values. We find a continuous quantum magnetic phase transition (Stoner phase) for Dirac fermions in a doped graphene sheet. The novel in-plane magnetic field dependence of charge and spin susceptibilities are obtained. Our results would be verified by experiments.
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