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Paper   IPM / Physic / 6918
School of Physics
  Title:   Modeling of An Integrated Active Feedback Preamplifier in A 0.25 μ m CMOS Technology at Cryogenic Temperatures
1.  M. Bucher
2.  M. Despeisse
3.  P. Jarron
4.  N. Pelloux
5.  A. Rivetti
6.  S. Saramad
7.  G. Anelli
  Status:   Published
  Journal: IEEE T. NUCL. SCI.
  No.:  5
  Vol.:  50
  Year:  2003
  Pages:   1290-1296
  Supported by:  IPM
This paper describes the modeling of a standard 0.25 μm CMOS technology at cryogenic temperatures. In the first step of teh work, the parameters of the EKV v2.6 model were extracted at different temperatures(300, 150 and 70 K). The extracted parameters were then used to optimize the performance of a room temperature designed active feedback front-end preamplifier (AFP) at 130 K. The results show that with a small adjustment of the extracted parameters it is possible to have a reasonable model at low temperatures. By optimizing the bias conditions at 130 K, a fall time down to 1.5 ns and a double plus resolution of 6.5 ns were measured for NA 60 proton beamscope. The proposed approach will also allow a low temperature design optimiztion for future projects, which will not be possible using only standard models provided by the foundry.

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