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| Paper IPM / P / 11520 |
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| Abstract: | |||||||||||||
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We preparedCunanoparticlesina-C:Hthinfilmsbyco-depositionofRF-sputteringandRF-PECVD
methodsatroomtemperature.ByincreasingCucontentinthesefilmsanonmetal-metal(N-M)
transitionisobserved.Thistransitionisexplainablebythepowerlawofpercolationtheory.Thecritical
metalcontentisobtained56exponentfor2dimensionsystemsandsmallerthantheonefor3dimensionsystems.Theelectrical
conductivityofdielectricsampleswasexplainedbytunneling.Activationtunnelingenergythatwas
obtainedfromtemperaturedependenceofelectricalresistivitycorrelateswithnearinfraredabsorption
peak ofsamplesandbothofthemdependonCucontentofthinfilms.IntheearlystageofN-M
transition,byincreasingmetalcontent,apeculiareffectofmetallictononmetallicstateoccurs.
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